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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2SB1556
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min) *High DC Current Gain: hFE= 5000(Min)@IC= -7A *Complement to Type 2SD2385
APPLICATIONS *Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
w w
scs .i w
-140 V -140 V -5 V -8 A -0.1 A 120 W
.cn mi e
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25
PC
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SB1556
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA ; IB= 0
-140
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -7A; IB= -7mA
B
-2.5
V
VBE(on)
Base-Emitter On Voltage
IC= -7A ; VCE= -5V
-3.0
V
ICBO
Collector Cutoff Current
VCB= -140V ; IE=0
-5
A
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-5
A
hFE-1
DC Current Gain
IC= -7A ; VCE= -5V
hFE-2
DC Current Gain
COB
Output Capacitance
fT
Current-Gain--Bandwidth Product
hFE-1 Classifications A 5000-12000
w w
B
scs .i w
C
IC= -12A ; VCE= -5V
IE=0 ; VCB= -10V;ftest= 1.0MHz
.cn mi e
5000 2000
30000
170
pF
IC=-1A ; VCE= -5V
30
MHz
9000-18000
15000-30000
isc Websitewww.iscsemi.cn
2


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